PART |
Description |
Maker |
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD CRYSTAL 32.768KHZ 12.5PF SMD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD CRYSTAL 12.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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USQ-1.2_20-D48 USQ-1.5_20-D48 USQ-1.8_20-D48 USQ-4 |
High-Density, Quarter-Brick 20 Amp, DC/DC Converters
|
Murata Manufacturing Co., Ltd.
|
SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
CMSH5-60 CMSH5-100 CMSH5-20 CMSH5-40 |
HIGH DENSITY SCHOTTKY BARRIER RECTIFIER 5.0 AMP, 20 THRU 100 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|
HI5728IN-T |
10-Bit, 125/60MSPS, Dual High Speed CMOS D/A Converter; Temperature Range: -40°C to 85°C; Package: 48-MQFP T&R DUAL, PARALLEL, WORD INPUT LOADING, 35 us SETTLING TIME, 10-BIT DAC, PQFP48
|
Intersil, Corp.
|
CBRHDSH1-100 |
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor Corp
|
CYD36S18V18-167BGXC CYD36S36V18-167BGXC CYD36S36V1 |
FullFlex(TM) Synchronous SDR Dual-Port SRAM; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 2M X 18 DUAL-PORT SRAM, 4 ns, PBGA484 FullFlex(TM) Synchronous SDR Dual Port SRAM; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 1M X 36 DUAL-PORT SRAM, 4 ns, PBGA484 FullFlex™ Synchronous SDR Dual Port SRAM 1M X 36 DUAL-PORT SRAM, 3.3 ns, PBGA484 FullFlex™ Synchronous SDR Dual Port SRAM 256K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484 FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 4 ns, PBGA256 FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 3.3 ns, PBGA256 FullFlex™ Synchronous SDR Dual Port SRAM 512K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
|
Cypress Semiconductor, Corp.
|
ISL9000AIRPLZ ISL9000AIRPPZ ISL9000AIRCJZ ISL9000A |
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, PDSO10 Dual LDO with Low Noise, Very High PSRR and Low IQ
|
Intersil, Corp. Intersil Corporation
|
ISL9014AIRPPZ-T ISL9014AIRFDZ-T ISL9014AIRPLZ-T IS |
Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, PDSO10
|
Intersil, Corp.
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